FTC3203 datasheet(1/2 Pages) FS

Part #	FTC3203

Description	Complementary to FTA1271

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

2012. 04. 27

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTC3203

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

4.70 MAX

4.80 MAX

3.70 MAX

1.00

1.27

0.85

0.45

14.00 0.50

2.30

D

1

2

3

B

G

H

F

E

C

E

0.51 MAX

M

+

_

0.55 MAX

1. EMITTER

2. COLLECTOR

3. BASE

FTC3203

TRANSISTOR (NPN)

FEATURES

Complementary to FTA1271

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

V

5

3

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

Collector-Emitter Voltage

30

V

VEBO

V

5

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

Collector Current -Continuous

800

mA

PC

Collector Power Dissipation

625

mW

TJ

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

-

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC = 0.1mA, IB=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 0.1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V ,

IE=0

0.1

μA

Collector cut-off current

ICEO

VCE= 25V ,

IB=0

0.2

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

hFE(1)

VCE=1V, IC= 100mA

100

320

DC current gain

hFE(2)

VCE=1V, IC= 700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC= 500 mA, IB= 20mA

0.5

V

Base-emitter voltage

VBE

VCE= 1V, IC= 10mA

0.8

V

Transition frequency

f T

VCE= 5 V, IC= 10mA

120

MHz

Collector Output Capacitance

Cob

VCB=10V,IE= 0,f=1MHz

13

pF

CLASSIFICATION OF hFE(1)

Rank

Y

O

Range

0

2

3

-

0

6

1

0

2

-

0

1

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