FTC3228 datasheet(1/1 Pages) FS

Part #	FTC3228

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 1 page

SEMICONDUCTOR

TECHNICAL D ATA

FTC3228

2011. 10. 31

1/1

Revision No : 0

TO – 92L

1. EMITTER

2. COLLECTOR

3. BASE

FTC3228

TRANSISTOR (NPN)

FEATURES

High Voltage

Large Collector Current Capability

Complementary to FTA1275

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 1mA,IE=0

160

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

6

V

Collector cut-off current

ICBO

VCB=150V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

1

μA

DC current gain

hFE

VCE=5V, IC=200mA

60

320

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

1.5

V

Base-emitter voltage

VBE

VCE=5V, IC=5mA

0.45

0.75

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

20

pF

Transition frequency

fT

VCE=5V,IC=200mA

20

MHz

CLASSIFICATION OF hFE

Y

O

R

K

N

A

R

RANGE

0

2

3

-

0

6

1

0

2

-

0

1

0

2

1

-

0

6

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

V

0

6

1

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

V

0

6

1

e

g

a

t

l

o

V

r

e

t

i

m

E

-

r

o

t

c

e

ll

o

C

VEBO

V

6

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

1

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

m

0

5

7

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

167

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

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