FTC3303 datasheet(1/3 Pages) FS

Part #	FTC3303

Description	TRANSISTOR (NPN)

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 3 page

2011. 12. 23

1/3

SEMICONDUCTOR

TECHNICAL DATA

FTC3303

Revision No : 0

TO – 252

1. BASE

2. COLLECTOR

3. EMITTER

FTC3303

TRANSISTOR (NPN)

FEATURES

Low Collector Saturation Voltage

High Speed Switching Time

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

t

i

n

U

x

a

M

p

y

T

n

i

M

s

n

o

i

t

i

d

n

o

c

t

s

e

T

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

7

V

Collector cut-off current

ICBO

VCB=100V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=7V,IC

1

0

=

μA

hFE(1)

VCE=1V, IC=1A

70

240

DC current gain

hFE(2)

VCE=1V, IC=3A

40

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB=150mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=3A,IB=150mA

1.2

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

80

pF

Transition frequency

fT

VCE=4V,IC=1A

20

MHz

CLASSIFICATION OF hFE(1)

Y

O

K

N

A

R

RANGE

0

4

2

-

0

2

1

0

4

1

-

0

7

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

V

7

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

5

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

1

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

125

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

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