FTC4003 datasheet(1/2 Pages) FS

Part #	FTC4003

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

2013. 08. 09

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTC4003

Revision No : 0

D-PAK (TO-252)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

FTC4003

TRANSISTOR (NPN)

FEATURES

High hFE

hFE=60 to 200

low VCE(sat)

VCE(sat)=0.6V

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.2

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS (Ta=25℃ unless

otherwise

specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10µA,IE

V

0

4

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB

V

0

4

0

=

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC

V

5

0

=

Collector cut-off current

ICBO

VCB=300V,IE

A

µ

1

.

0

=

Emitter cut-off current

IEBO

VEB=4V,IC

A

µ

1

.

0

=

DC current gain

hFE

VCE=10V,IC=50mA

60

200

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB

V

6

.

0

A

m

5

=

Base-emitter saturation voltage

VBE(sat)

IC=50mA,IB

V

1

A

m

5

=

Transition frequency

fT

VCE=30V,IC

z

H

M

0

7

A

m

0

1

=

CLASSIFICATION OF

hFE

Rank

E

D

Range

0

2

-

0

1

0

2

1

-

0

6

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