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FTC4376 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTC4376 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2012.02.13 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTC4376 FTC4376 TRANSISTOR (NPN) FEATURES Small Flat Package High Current Application Complementary to FTA1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA hFE(1) VCE=1V, IC=100mA 100 320 DC current gain hFE(2) VCE=1V, IC=700mA 35 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=20mA 0.5 V Base-emitter voltage VBE VCE=1V, IC=10mA 0.5 0.8 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 13 pF Transition frequency fT VCE=5V,IC=10mA 120 MHz CLASSIFICATION OF hFE(1) RANK Y O RANGE 100–200 160–320 MARKING Y P O P t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 5 3 e g a t l o V e s a B - r o t c e ll o C VCEO V 0 3 e g a t l o V r e t t i m E - r o t c e ll o C VEBO V 5 e g a t l o V e s a B - r e t t i m E IC A m 0 0 8 t n e r r u C r o t c e ll o C PC W m 0 0 5 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 250 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ SOT-89 DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.7 MAX 0.7 MIN 0.5+0.15/-0.10 C J G D A C K F MILLIMETERS H F 1 2 3 F D + _ + _ 1. BASE 2. COLLECTOR 3. EMITTER |
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