FTC4377 datasheet(1/2 Pages) FS

Part #	FTC4377

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

2012.03.26

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTC4377

MAXIMUM RATINGS (Ta=25℃unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

SOT-89

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.7 MAX

0.7 MIN

0.5+0.15/-0.10

C

J

G

D

A

C

K

F

MILLIMETERS

H

F

1

2

3

F

D

+

_

+

_

1. BASE

2. COLLECTOR

3. EMITTER

FTC4377

TRANSISTOR (NPN)

FEATURES

Low voltage

Low Vce(sat) : 0.5V Max (Ic=2A, I =0.05A)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

2

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE

V

0

3

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB

V

0

1

0

=

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC

V

6

0

=

Collector cut-off current

ICBO

VCB=30V,IE

1

.

0

=

μA

Emitter cut-off current

IEBO

VEB=6V,IC

1

.

0

=

μA

hFE(1)

VCE=1V,IC

0

6

0

4

1

A

5

.

0

=

DC current gain

hFE(2)

VCE=1V,IC

0

7

A

2

=

Collector-emitter saturation voltage

VCE(sat)

IC=2A,I

B

V

5

.

0

A

m

0

5

=

Base-emitter voltage

VBE

VCE=1V,IC

V

5

.

1

A

2

=

Transition frequency

fT

VCE=1V,IC

z

H

M

0

5

1

A

5

.

0

=

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

27

pF

CLASSIFICATION OF hFE(1)

Rank

D

C

B

A

Range

140-240

200-330

300-450

420-600

Marking

SA

SB

SC

SD

B

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