2016. 04. 05

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SEMICONDUCTOR

TECHNICAL DATA

FTC5171

Revision No : 0

FTC5171

TRANSISTOR (NPN)

FEATURES

TO-220F

A

A

B

C

C

D

D

E

E

F

G

H

H

1 52 MAX

1 52 MAX

J

K

L

M

L

N

N

N

O

Q

R

R

1

2

3

M

DIM

MILLIMETERS

10 16

0 20

+

_

15 00

0 20

+

_

3 00

0 20

+

_

0 625±0 125

3 50 typ

0 45

0 1

+

_

3 80

0 2

+

_

13 20

0 20

+

_

2 54

0 2

+

_

4 50

0 2

+

_

6 36

0 3

+

_

2 70

0 20

+

_

2 7 typ

16 80

0 4

+

_

1. Base

2. Collector

3. Emitter

Extremely Satisfactory Linearity of the Forward Current

Wide Safe Operation Area

General power and driver stage amplifier applications.

Full-pack Package which can be Installed to the Heat Sink with

One Screw.

℃ unless otherwise noted)

ELECTRICAL

℃ unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

180

V

V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

o

t

r

o

t

c

e

ll

o

C

CEO

180

V

V

e

g

a

t

l

o

V

e

s

a

B

o

t

r

e

t

t

i

m

E

EBO

5.0

V

I

s

u

o

u

n

i

t

n

o

C

-

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

C

C

2.0

A

I

s

u

o

u

n

i

t

n

o

C

-

t

n

e

r

r

u

C

e

s

a

B

B

1.0

A

P

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

C

2.0

W

P

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

)

℃

20

W

Junction Temperature

150

℃

Storage Temperature Range

-55～150

℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector to Emitter Breakdown

Voltage

180

V

Collector Cut-Off Current

5.0

μA

Emitter Cut-Off Current

5.0

μA

DC Current Gain

100

320

50

Collector to Emitter Saturation

Voltage

0.16

1.0

V

Base to Emitter Voltage

0.68

1.5

V

Transition Frequency

200

MHz

Collector output capacitance

f=1.0MHz

16

pF