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SFAD503G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SFAD503G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() - 252 - Marking 0 5 0 5 30 5 .250(6.55) .246(6.45) .211(5.36) .207(5.26) .024(0.60) .031(0.80) .093(2.35) .089(2.25) .013(0.54) .011(0.48) .053(1.30) .045(1.10) .059(1.45) .039(0.95) .112(2.85) .092(2.35) .211(5.36) .207(5.26) .013(0.54) .011(0.48) 12 3 SFAD501G THRU SFAD508G 5.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 5.0 Amperes Features Ultrafast Recovery Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Epoxy molded Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL-STD- 202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds. Weight: 0.4 grams DPAK Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SFAD 501G SFAD 502G SFAD 503G SFAD 504G SFAD 505G SFAD 506G SFAD 507G SFAD 508G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 480 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current @TC = 100 ℃ I(AV) 5.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 55 A Maximum Instantaneous Forward Voltage @5.0A VF 1.3 1.7 1.8 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 100 2.0 µA mA Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical Thermal Resistance (Note 3) R θJC 9.0 ℃/W Typical Junction Capacitance (Note 2) Cj 50 30 pF Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from Junction to Case Mounted on Hestsink. |
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