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FTD1898P Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTD1898P
Description  TRANSISTOR (NPN)
PDF  2 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTD1898P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTD1898P Datasheet HTML 1Page - First Silicon Co., Ltd FTD1898P Datasheet HTML 2Page - First Silicon Co., Ltd  
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2019.12.17
2/2
FTD1898
Revision No : 1
Electrical characteristic curves
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25
°C
VCE=5V
2
4
0
1
8
0
6
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.2 Grounded emitter output
characteristics
1 0
0
0 8
0 6
0.4
0 2
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
Ta=25
°C
0
100
1000
100
0
0
0
1
0
1
0
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current
Ta=25
°C
VCE=3V
1V
0 01
0.1
1 0
2 0
0 2
0 02
0 05
0 5
100
0
0
0
1
0
1
0
COLLECTOR CURRENT : IC (
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
IC/IB=20/1
Ta=25
°C
10/1
1
2
5 10 20 50 100 200 5001000
EMITTER CURRENT : −IE
(mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25
°C
VCE=5V
0.1 0.2 0.5 1
2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (
V)
EMITTER TO BASE VOLTAGE : VEB (
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25
°C
f=1MHz
IE=0A
Ic=0A
Ic Max (Pulse)
Ta=25
°C
Single
non-repetitive
pulse
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
0.1 0.2 0.5 1 2 5 10 20 50100
500
200
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Fig.7 Safe operating area
1 2
12
10000
10 0
1000
1000
COLLECTOR CURRENT : IC (
mA)
Fig.8 DC current gain vs.
collector current



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