FTD1899 datasheet(1/2 Pages) FS

Part #	FTD1899

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

2012. 03. 26

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTD1899

Revision No : 0

DPAK

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

FTD1899

TRANSISTOR (NPN)

FEATURES

Low VCE(sat)

High Transition Frequency

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

A

3

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

1

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

125

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V,IE=0

10

μA

Emitter cut-off current

IEBO

VEB=7V,IC 0

=

10

μA

hFE(1)

*

VCE=2V, IC=0.2A

60

hFE(2)

*

VCE=2V, IC=0.6A

100

400

DC current gain

hFE(3)

*

VCE=2V, IC=2A

50

Collector-emitter saturation voltage

VCE(sat)

*

IC=1.5A,IB=0.15A

0.25

V

Base-emitter saturation voltage

VBE(sat)

*

IC=1.5A,IB=0.15A

1.2

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

30

pF

Transition frequency

fT

VCE=5V,IC=1.5A

120

MHz

*Pulse test: pulse width

≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE(2)

K

L

M

K

N

A

R

RANGE

0

4

-

0

2

0

2

3

-

0

6

1

0

2

-

0

1

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