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SFAS804G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SFAS804G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 266 - PIN 1 PIN 2 Case Positive SFAS801G THRU SFAS808G 8.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 8.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: D 2PAK Molded plastic Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds/.16”,(4.06mm) from case. Weight: 2.24 grams D 2PAK Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SFAS 801G SFAS 802G SFAS 803G SFAS 804G SFAS 805G SFAS 806G SFAS 807G SFAS 808G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current @TC = 100 ℃ I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 125 A Maximum Instantaneous Forward Voltage @ 8.0A VF 0.975 1.3 1.7 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=100 ℃ IR 10 400 uA uA Maximum Reverse Recovery Time(Note1) Trr 35 nS Typical Junction Capacitance (Note 2) Cj 80 60 pF Typical Thermal Resistance (Note 3) R θJC 2.2 ℃/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from Junction to Case. |
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