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FTD669 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTD669 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2012. 04. 27 1/2 SEMICONDUCTOR TECHNICAL DATA FTD669/A Revision No : 0 1 EMITTER 2 COLLECTOR 3 BASE TO-126 A B DIM MILLIMETERS 8.3 MAX A B 11.3±0.3 C C 4.15 TYP D D 3.2±0.2 E E 2.0±0.2 F F 2.8±0.1 G 3.2±0.1 G H H 1.27±0.1 I I 1.40±0.1 K K 15.5±0.2 L L 0.76±0.1 M M 2.28 TYP O P O 4.56±0.1 P 0.6 MAX 1 2 3 66 A TRANSISTOR (NPN) FEATURES Low Frequency Power AmplifierComplementary Pair with FTB649/A MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage FTD669 FTD669A 120 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IE V 0 8 1 0 = Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 FTD669 FTD669A 120 160 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC V 5 0 = Collector cut-off current ICBO VCB=160V, IE A µ 0 1 0 = Emitter cut-off current IEBO VEB=4V, IC A µ 0 1 0 = hFE(1) VCE=5V, IC=150mA FTD669 FTD669A 60 60 320 200 DC current gain hFE(2) VCE=5V, IC=500mA 30 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=150mA 1.5 V Transition frequency fT VCE=5V, IC=150mA 140 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF CLASSIFICATION OF hFE(1) D C B k n a R Range FTD669 60-120 100-200 160-320 FTD669A 60-120 100-200 |
Similar Part No. - FTD669 |
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Similar Description - FTD669 |
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