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SFF2004G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SFF2004G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 290 - SFF2004G THRU SFF2005G Isolation 20.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 200 to 300 Volts Current 20.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: ITO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. Weight: 2.24 grams ITO-220AB Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SFF2004G SFF2005G Units Maximum Recurrent Peak Reverse Voltage VRRM 200 300 V Maximum RMS Voltage VRMS 140 210 V Maximum DC Blocking Voltage VDC 200 300 V Maximum Average Forward Rectified Current @TC = 100 ℃ I(AV) 20.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 180 A Maximum Instantaneous Forward Voltage @ 10.0A VF 0.975 1.30 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=100 ℃ IR 10 400 uA uA Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical Junction Capacitance (Note 2) Cj 90 pF Typical Thermal Resistance (Note 3) R θJC 2.5 ℃/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from Junction to Case Mounted on Heatsink. .272(6.9) .248(6.3) .543(13.8) .512(13.2) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .134(3.4)DIA .113(3.0)DIA |
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