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FTD882F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTD882F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2013. 07. 24 1/2 SEMICONDUCTOR TECHNICAL DATA FTD882F Revision No : 0 FTD882F NPN TRANSISTOR SOT-89 DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.8 MAX 0.7 MIN 0.5+0.15/-0.10 C J G D A C K F MILLIMETERS H F 1 2 3 F D + _ + _ 1. BASE 2. COLLECTOR 3. EMITTER FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100 μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 µA Collector cut-off current ICEO VCE= 30V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA hFE(1) VCE=2V, IC= 1A 60 400 DC current gain hFE(2) VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V Transition frequency fT VCE= 5V , Ic=0.1A f =10MHz 50 MHz |
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Similar Description - FTD882F |
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