MJD41C datasheet(1/5 Pages) FS

Part #	MJD41C

Description	TRANSISTOR (NPN)

PDF	5 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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MJD41C TRANSISTOR (NPN)

FEATURES

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100

μA,IE

0

1

0

=

V

Collector-emitter breakdown voltage

VCEO(sus)

IC=30mA,IB

0

1

0

=

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100

μA,IC

5

0

=

V

Collector cut-off current

ICEO

VCB=60V,IE 0

=

50

μA

Emitter cut-off current

IEBO

VEB=5V IC 0

=

0.5

mA

hFE(1)

VCE=4V IC=0.3A

30

DC current gain

hFE(2)

VCE=4V,IC=3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=6A,IB

A

6

.

0

=

1.5

V

Base-emitter voltage

VBE

VCE=4V,IC

A

6

=

2

V

Transition frequency

fT

VCE=10V,IC=500mA,f=1MHz

3

MHz

TO-252

1. BASE

2. COLLECTOR

3. EMITTER

SEMICONDUCTOR

TECHNICAL DATA

MJD41C

2020. 02. 18

1/5

Revision No : 1

Designed for General Purpose Amplifier and Low Speed

Switching Applications.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

6

A

PC

Collector Power Dissipation

1.25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

℃

-65~150

IB

Base Current

2

A

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