MJD42C datasheet(1/5 Pages) FS

Part #	MJD42C

Description	TRANSISTOR (PNP)

PDF	5 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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MJD42C TRANSISTOR (PNP)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-6

A

PC

Collector Power Dissipation

1.25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

Collector-base breakdown voltage

V(BR)CBO

IC=-100

μA,IE=0

-100

V

Collector-emitter breakdown voltage

VCEO(sus)

IC=-30mA,IB=0

-100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100

μA,IC=0

-5

V

Collector cut-off current

ICEO

VCB=-60V,IE=0

-50

μA

Emitter cut-off current

IEBO

VEB=-5V IC=0

-0.5

mA

hFE(1)

VCE=-4V IC=-0.3A

30

DC current gain

hFE(2)

VCE=-4V,IC=-3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=-6A,IB=-0.6A

-1.5

V

Base-emitter voltage

VBE

VCE=-4V,IC=-6A

-2

V

Transition frequency

fT

VCE=-10V,IC=-500mA,f=1MHz

3

MHz

FEATURES

Designed for General Purpose Amplifier and Low Speed

Switching Applications.

TO-252

1. BASE

2. COLLECTOR

3. EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

SEMICONDUCTOR

TECHNICAL DATA

MJD42C

2020. 02. 18

1/5

Revision No : 1

IB

Base Current

-2

A

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