MJD2955 datasheet(1/1 Pages) FS

Part #	MJD2955

Description	TRANSISTOR (PNP)

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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SEMICONDUCTOR

TECHNICAL D ATA

MJD2955

2011. 10. 14

1/1

Revision No : 0

MJD2955

TRANSISTOR

(PNP)

FEATURES

Designed for General Purpose Amplifier and Low Speed

Switching Applications

Electrically Simiar to MJD3055

DC Current Gain Specified to10 Amperes

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-10

A

PC

Collector Power Dissipation

1.25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE

V

0

7

-

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=-200 mA,IB

V

0

6

-

0

=

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC

V

5

-

0

=

ICBO

VCB=-70V,IE

20

-

0

=

Collector cut-off current

ICEO

VCB=-30V,IB

A

µ

0

5

-

0

=

Emitter cut-off current

IEBO

VEB=-5V,IC

A

m

5

.

0

-

0

=

hFE(1)

VCE=-4V,IC

0

1

0

2

A

4

-

=

DC current gain

hFE(2)

VCE=-4V,IC

5

A

0

1

-

=

VCE(sat)(1)

IC=-4A, IB

V

1

.

1

-

A

4

.

0

-

=

Collector-emitter saturation voltage

VCE(sat)(2)

IC=-10A, IB

V

8

-

A

3

.

3

-

=

Base-emitter voltage

VBE

VCE=-4V, IC

V

8

.

1

-

A

4

-

=

Transition frequency

fT

VCE=-10V,IC=-0.5A,f=500KHZ

2

MHz

TO-252

1.BASE

2.COLLECTOR

3.EMITTER

A

µ

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