MPS651 datasheet(1/2 Pages) FS

Part #	MPS651

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

SEMICONDUCTOR

TECHNICAL DATA

MPS651

2013. 08. 09

1/2

Revision No : 0

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

4.70 MAX

4.80 MAX

3.70 MAX

1.00

1.27

0.85

0.45

14.00 0.50

2.30

D

1

2

3

B

G

H

F

E

C

E

0.51 MAX

M

+

_

0.55 MAX

1. EMITTER

3. COLLECTOR

2. BASE

MPS651

TRANSISTOR (NPN)

FEATURES

General Purpose Amplifier

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

V

0

8

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

V

0

6

e

g

a

t

l

o

V

r

e

t

i

m

E

-

r

o

t

c

e

ll

o

C

VEBO

V

5

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

2

s

u

o

u

n

i

t

n

o

C

-

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

m

5

2

6

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

80

V

Collector-emitter

breakdown

V(BR)CEO

*

IC=10mA,IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.01mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=80V,IE

1

.

0

=

μA

Emitter cut-off current

IEBO

VEB=4V,IC

1

.

0

=

μA

hFE(1)

*

VCE=2V, IC=50mA

75

hFE(2)

*

VCE=2V, IC=500mA

75

hFE(3)

*

VCE=2V, IC=1A

75

DC current gain

hFE(4)

*

VCE=2V, IC=2A

40

VCE(sat) (1)

*

IC=2A,IB=200mA

0.5

V

Collector-emitter saturation voltage

VCE(sat) (2)

*

IC=1A,IB=100mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

*

IC=1A,IB=100mA

1.2

V

Base-emitter voltage

VBE

*

IC=1A, VCE=2V

1

V

Transition frequency

fT

VCE=5V,IC=50mA,f=100MHz

75

MHz

*Pulse test: pulse width

≤300μs, duty cycle≤ 2.0%.

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