2

EMITTER

3

COLLECTOR

1

BASE

SOT–23

2015. 01. 18

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTC3838

Revision No : 0

1

3

2

High-Frequency Amplifier Transistor

Features

2.Small rbb`Cc and high gain.(Typ.4ps)

3.Small NF.

Parameter

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

CBO

20

V

Collector-Emitter Voltage

11

V

V

e

g

a

t

l

o

v

e

s

a

b

-

r

e

t

t

i

m

E

EBO

3

V

I

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

C

C

50

mA

Collector power dissipation

0.2

W

T

e

r

u

t

a

r

e

p

m

e

t

n

o

i

t

c

n

u

J

j

150

°C

T

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55~+150

°C

p

y

T

.

n

i

M

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Max.

Unit

Conditions

Collector-base breakdown voltage

BV

CBO

20

-

-

V

I

Collector-emitter breakdown voltage

BV

CEO

11

-

-

V

I

Emitter-base breakdown voltage

BV

EBO

3

-

-

V

I

Collector cutoff current

I

CBO

-

-

0.5

µA

V

Emitter cutoff current

I

EBO

-

-

0.5

µA

V

Collector-emitter saturation voltage

V

CE(sat)

-

-

0.5

V

I

DC current transfer ratio

h

FE

56

-

180

-

V

Transition frequency

f

T

1.4

3.2

-

GHz

V

Output capacitance

Cob

-

0.8

1.5

pF

V

Collector-base time constant

rbb`Cc

-

4

12

ps

V

F

N

r

o

t

c

a

f

e

s

i

o

N

-

3.5

-

dB

V

I

Ω

DEVICE MARKING

FTC3838 = AD

4.

ORDERING INFORMATION

Device

Package

Shipping

FTC3838

3000/Tape & Reel

SOT-23

We declare that the material of product compliance with RoHS requirements.