2012. 09. 03

1/3

SEMICONDUCTOR

TECHNICAL DATA

FTC5635

Revision No : 0

1

3

2

SC-70 / SOT– 323

High-Frequency Amplifier

Transistor

Features

1.High gain bandwidth product.(Typ.f

T

=8.0GHz)

2.High gain,low noise

3.Can operate at low voltage

Parameter

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

CBO

15

V

Collector-Emitter Voltage

6

V

V

e

g

a

t

l

o

v

e

s

a

b

-

r

e

t

t

i

m

E

EBO

I

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

C

C

50

mA

Collector power dissipation

150

mW

T

e

r

u

t

a

r

e

p

m

e

t

n

o

i

t

c

n

u

J

j

125

°C

T

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55~+125

°C

DEVICE MARKING

FTC5635 = HF1

4.

ORDERING INFORMATION

Device

Package

Shipping

FTC5635

3000/Tape & Reel

SC-70

We declare that the material of product compliance with RoHS requirements.

1.5

V

p

y

T

.

n

i

M

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Max.

Unit

Conditions

Collector cutoff current

I

CBO

-

-

1.0

µA

V

Emitter cutoff current

I

EBO

-

-

1.0

µA

V

Insertion power gain

21

-

DC current transfer ratio

h

FE

50

-

250

-

V

CE

I

C

=5V,

Transition frequency

f

T

5.0

8.0

-

GHz

V

I

Output capacitance

Cob

-

1.0

pF

V

I

F

N

r

o

t

c

a

f

e

s

i

o

N

-

1.4

-

dB

V

I

S

2

-

dB

9.0

12.0

I

V

I

I

=10mA