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MMBTA42F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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MMBTA42F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  SEMICONDUCTOR TECHNICAL DATA MMBTA42F 2012. 01. 13 1/2 Revision No : 0 SOT-89 DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.7 MAX 0.7 MIN 0.5+0.15/-0.10 C J G D A C K F MILLIMETERS H F 1 2 3 F D + _ + _ 1. BASE 2. COLLECTOR 3. EMITTER MMBTA42F TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) e u l a V r e t e m a r a P l o b m y S Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power Dissipation 500 mW RθJA Thermal Resistance from Junction to Ambient 250 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V ICBO VCB=200V,IE=0 0.25 µA VCE=200V,IB=0 0.25 µA Collector cut-off current ICEO VCE=300V,IB=0 5 µA Emitter cut-off current IEBO VEB=5V,IC 0 = 0.1 µA hFE(1) VCE=10V, IC=1mA 60 hFE(2) VCE=10V, IC=10mA 80 250 DC current gain hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50 MHz MARKING : A42 |
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