High Voltage Transistor

MAXIMUM RATINGS

Rating

Symbol

MMBTA92 MMBTA93

Unit

Collector–Emitter Voltage

–300

–200

Vdc

Collector–Base Voltage

–300

–200

Vdc

Emitter–Base Voltage

–5.0

Vdc

Collector Current — Continuous

–500

mAdc

THERMAL CHARACTERISTICS

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

mW

8

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

556

°C/W

P

n

o

i

t

a

p

i

s

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

300

mW

4

.

2

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

417

°C/W

Junction and Storage Temperature

–55 to +150

°C

Value

2

EMITTER

3

COLLECTOR

1

BASE

FEATURE

High voltage.

For Telephony or Professional communication equipment applications.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

MMBTA92

2D

3000/Tape&Reel

MMBTA93

2E

3000/Tape&Reel

PNP Silicon

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%.

We declare that the material of product compliance with RoHS requirements.

SEMICONDUCTOR

TECHNICAL DATA

MMBTA92/93

SOT–23

1

3

2

2007. 12. 18

1/4

Revision No : 0