SEMICONDUCTOR

TECHNICAL DATA

MMBTA94

2013. 02. 07

1/3

Revision No : 0

SOT– 23

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3

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PNP EPITAXIAL PLANAR TRANSISTOR

Description

The MMBTA94 is designed for application that requires high voltage.

Features

• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA

• Complementary to MMBTA44

We declare that the material of product compliance with RoHS requirements.

Absolute Maximum Ratings

DEVICE MARKING

MMBTA94 = 4Z

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

1

BASE

2

EMITTER

COLLECTOR

3

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 350 mW

• Maximum Voltages and Currents (Ta=25

°C)

VCBO Collector to Base Voltage ...................................................................................... -400 V

VCEO Collector to Emitter Voltage ................................................................................... -400 V

VEBO Emitter to Base Voltage ............................................................................................. -6 V

IC Collector Current ...................................................................................................... -150 mA

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

-

V

IC=-100uA, IE=0

BVCEO

-400

-

-

V

IC=-1mA, IB=0

BVEBO

-6

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-100

nA

VCB=-400V, IE=0

IEBO

-

-

-100

nA

VEB=-6V, IC=0

ICES

-

-

-500

nA

VCE=-400V, VBE=0

*VCE(sat)1

-

-

-200

mV

IC=-1mA, IB=-0.1mA

*VCE(sat)2

-

-

-300

mV

IC=-10mA, IB=-1mA

*VCE(sat)3

-

-

-600

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-

-900

mV

IC=-10mA, IB=-1mA

*hFE1

50

-

-

VCE=-10V, IC=-1mA

*hFE2

75

-

200

VCE=-10V, IC=-10mA

*hFE3

60

-

-

VCE=-10V, IC=-50mA

*hFE4

20

-

-

VCE=-10V, IC=-100mA

Cob

-

4

6

pF

VCE=-10V, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%