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MPS2222 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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MPS2222 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  FEATURE Complementary PNP Type available (MPS2907) MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE V 5 7 0 = Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB V 0 4 0 = Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC V 6 0 = Collector cut-off current ICBO VCB= 60V, IE A n 0 1 0 = Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V, IC A n 0 0 1 0 = hFE(1) VCE=10V,IC= 150mA 100 300 hFE(2) VCE=10V,IC= 0.1mA 40 DC current gain hFE(3) * VCE=10V, IC= 500mA 42 VCE(sat)(1) * IC= 500mA, IB=50mA 0.6 V Collector-emitter saturation voltage VCE(sat)(2) * IC= 150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat) * IC= 500mA, IB= 50mA 1.2 V Delay time td 10 nS Rise time tr VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V,Ic=150mA,IB1=IB2=15mA 60 nS Transition frequency fT VCE=20V, IC=20mA, f=100MHz 300 MHz * pulse test CLASSIFICATION OF hFE(1) Rank H L Range 0 0 3 - 0 0 2 0 0 2 - 0 0 1 General Purpose Transistor NPN Silicon SEMICONDUCTOR TECHNICAL DATA MPS2222 2010. 07. 22 1/2 Revision No : 0 TO-92 DIM MILLIMETERS A B C D F G H J L 4.70 MAX 4.80 MAX 3.70 MAX 1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B G H F F E C E 0.51 MAX M + _ 0.55 MAX 1. EMITTER 3. COLLECTOR 2. BASE |
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Similar Description - MPS2222 |
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