2018. 10. 14

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

MJD127

MJD127

FEATURES

∙ High DC Current Gain

∙ Electrically Similar to Popular TIP127

∙ Built-in a Damper Diode at E-C

PNP Silicon Darlington Transistor

Equivalent Circuit

We declare that the material of

product compliance with RoHS requirements.

D-PAK (TO-252)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6.50 ± 0.2

5.60 ± 0.2

5.20 ± 0.2

1.50 ± 0.2

2.70 ± 0.2

2.30 ± 0.1

1.00 MAX

2.30 ± 0.2

0.5 ± 0.1

0.50 ± 0.10

E

1.6 ± 0.2

O

A

C

I

J

H

F

F

L

1

2

3

1. BASE

2. COLLECTOR

3. EMITTER

0.95 MAX

Q

B

C

E

PNP

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

-100

V

Collector-Emitter Voltage

-100

V

Emitter-Base Voltage

-5

V

Collector Current -Continuous

-8

A

Collector Power Dissipation

1.5

W

Junction Temperature

150

℃

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

-100

V

Collector-emitter breakdow n voltage

-100

V

Emitter-base breakdown voltage

-5

V

Collector cut-off current

-10

µA

Collector-emitter cut-off current

-10

µA

Emitter cut-off current

-2

mA

1000

12000

DC current gain

100

*

-2

V

Collector-emitter saturation v oltage

*

-4

V

Base-emitter saturation voltage

*

-4.5

V

Base-emitter voltage

*

-2.8

V

Collector output capacit ance

300

pF

*Pulse Test: Pulse Width

≤380µs, Duty Cycle≤2%