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CMBTA44 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBTA44 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 SOT-23 Formed SMD Package Marking Code is =3Z Designed for Extremely High Voltage Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL UNITS Collector Base Voltage VCBO V Collector Emitter Voltage VCEO V Emitter Base Voltage VEBO V Collector Current IC mA Collector Power Dissipation PD mW Operating And Storage Junction Temperature Range Tj, Tstg ºC THERMAL RESISTANCE Junction to Ambient in free air Rth(j-a) ºC/W Electrical Characterstics (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL CONDITIONS MIN TYP MAX UNIT Collector Cut Off Current ICBO VCB=400V, IE=0 100 nA Collector Cut Off Current ICES VCE=400V, VBE=0 500 nA Emitter Cut Off Current IEBO VEB=4V, IC=0 100 nA Collector Base Voltage VCBO IC=100µA, IE=0 450 V Collector Emitter Voltage VCES IC=100µA, VBE=0 450 V Collector Emitter Voltage VCEO IC=1mA, IB=0 400 V Emitter Base Voltage VEBO IE=10µA, IC=0 6 V IC=1mA, IB=0.1mA 0.40 V IC=10mA, IB=1mA 0.50 V IC=50mA, IB=5mA 0.75 V Base Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 0.75 V DC Current Gain hFE VCE =10V, IC=1mA 40 VCE =10V, IC=10mA 50 200 VCE =10V, IC=50mA 45 VCE =10V, IC=100mA 20 Transition Frequency fT VCE=10V, IC=10mA, f=10MHz 20 MHz Output Capacitance Cob VCB=20V, IE =0, f=1MHz 7.0 pF Input Capacitance Cib VEB =0.5V, Ic=0, f=1MHz 130 pF VALUE 450 400 6 300 350 - 65 to+150 357 Collector Emitter Saturation Voltage VCE(sat) PIN CONFIGURATION (NPN) 1 = BASE 2 = EM ITTER 3 = COLLECTOR 2 1 3 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
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