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IR2104 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IR2104 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 14 page  Data Sheet No. PD60046-S Typical Connection Product Summary VOFFSET 600V max. IO+/- 130 mA / 270 mA VOUT 10 - 20V ton/off (typ.) 680 & 150 ns Deadtime (typ.) 520 ns HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Cross-conduction prevention logic • Internally set deadtime • High side output in phase with input • Shut down input turns off both channels • Matched propagation delay for both channels • Also available LEAD-FREE Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. www.irf.com 1 IR2104(S)&(PbF) V CC V B V S HO LO COM IN SD SD IN up to 600V TO LOAD V CC (Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. Packages 8 Lead PDIP IR2104 8 Lead SOIC IR2104S |
Similar Part No. - IR2104 |
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Similar Description - IR2104 |
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