HM16N02D datasheet(2/7 Pages) HMSEMI

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HM16N02D

Electrical Characteristics (TA=25℃ unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF Characteristics

Drain-source breakdown voltage

BVDSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=20V, VGS=0V

µA

Gate-body leakage

IGSS

VDS=0V, VGS=±12V

±100

ON Characteristics

Gate threshold voltage

VGS(th)

VDS=VGS, ID=250µA

0.5

0.7

0.9

Drain-source on-state resistance

RDS(ON)

VGS=4.5V, ID=16A

mΩ

VGS=2.5V, ID=12A

11.5

Forward transconductance

gfs

VGS=5V, ID=16A

Dynamic Characteristics

Input capacitance

CISS

VDS=10V ,VGS=0V

f=1.0MHz

900

Output capacitance

COSS

220

Reverse transfer capacitance

CRSS

100

Switching Characteristics

Turn-on delay time

tD(ON)

VDD=10V

ID=16A

VGEN=4.5V

RGEN=6ohm

Rise time

Turn-off delay time

tD(OFF)

Fall time

Total gate charge

VDS=10V,ID=16A

VGS=4.5V

Gate-source charge

Qgs

2.3

Gate-drain charge

Qgd

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode forward voltage

VSD

VGS=0V,Is=16A

1.2

Notes:

a. surface mounted on FR4 board,t≤10sec

b. pulse test: pulse width≤300μs,duty≤2%

c. guaranteed by design, not subject to production testing

Thermal Characteristics

Thermal Resistance junction-to ambient

Rth JA

100

℃/W

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