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TSC5302D Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSC5302D
Description  High Voltage NPN Transistor with Diode
PDF  5 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5302D Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TS5302D Preliminary
2-2
2004/09 rev. A
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
800
--
--
V
Collector-Emitter Breakdown Voltage
IC = 5mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
10
--
--
V
Collector Cutoff Current
VCB = 500V, IE = 0
ICBO
--
--
10
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
VCE(SAT)1
VCE(SAT)2
--
--
--
--
0.4
0.6
V
Base-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
VCB(SAT)1
VCB(SAT)2
--
--
--
--
0.9
1.0
V
DC Current Gain
VCE = 5V, IC = 0.4A
VCE = 5V, IC = 1A
hFE 1
hFE 2
20
6
--
--
--
--
Turn On Time
tON
--
--
0.5
uS
Storage Time
tSTG
--
2.0
2.75
uS
Fall Time
VCC = 250V, IC = 1A,
IB1 = IB2 = 0.2A, tp= 25uS
Duty cycle < 1%
tF
--
--
0.2
uS
Doide
Fall Time
IC = 1A
tF
--
--
700
nS
Forward Voltage
IC = 1A
Vf
--
--
1.4
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%



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