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TSC5304D Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC5304D Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() Preliminary TS5304D Preliminary 2-2 2004/09 rev. A Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 1mA, IB = 0 BVCBO 750 -- -- V Collector-Emitter Breakdown Voltage IC = 5mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 500V, IE = 0 ICBO -- -- 10 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 1.0A / 0.2A IC / IB = 2.0A / 0.5A IC / IB = 4.0A / 1.0A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- -- -- -- 0.35 0.55 1.25 V Base-Emitter Saturation Voltage IC / IB = 1.0A / 0.2A IC / IB = 2.0A / 0.5A VCB(SAT)1 VCB(SAT)2 -- -- -- -- 1.0 1.1 V DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 2A hFE 1 hFE 2 15 10 20 -- -- -- Turn On Time tON -- -- 0.5 uS Storage Time tSTG -- -- 3 uS Fall Time VCC = 250V, IC = 2A, IB1 = IB2 = 0.4A, tp= 25uS Duty cycle < 1% tF -- -- 0.2 uS Doide Fall Time IC = 2A tF -- -- 500 nS Forward Voltage IC = 2A Vf -- -- 1.3 V Note : pulse test: pulse width <=300uS, duty cycle <=2% |
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