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TSM55N03 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM55N03
Description  N-Channel Enhancement Mode MOSFET
PDF  3 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM55N03 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TSM55N03 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSM55N03 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSM55N03 Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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TSM55N03
2-3
2005/04 rev. B
Electrical Characteristics
TJ = 25
oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Drain-Source On-State Resistance
VGS = 4.5V, ID = 30A
RDS(ON)
--
7.5
9.0
mΩ
Drain-Source On-State Resistance
VGS = 10V, ID = 30A
RDS(ON)
--
4.5
6.0
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1.0
1.6
3.0
V
Zero Gate Voltage Drain Current
VDS = 25V, VGS = 0V
IDSS
--
--
1.0
uA
Gate Body Leakage
VGS = ± 20V, VDS = 0V
IGSS
--
--
± 100
nA
Gate Resisrance
Rg
--
--
--
Forward Transconductance
VDS =15V, ID = 15A
gfs
--
--
--
S
Dynamic
Total Gate Charge
Qg
--
26
--
Gate-Source Charge
Qgs
--
6.0
--
Gate-Drain Charge
VDS = 15V, ID = 25A,
VGS = 10V
Qgd
--
5.0
--
nC
Turn-On Delay Time
td(on)
--
17
--
Turn-On Rise Time
tr
--
3.5
--
Turn-Off Delay Time
td(off)
--
40
--
Turn-Off Fall Time
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
6.0
--
nS
Input Capacitance
Ciss
--
2134
--
Output Capacitance
Coss
--
343
--
Reverse Transfer Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Crss
--
134
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
20
A
Diode Forward Voltage
IS = 20A, VGS = 0V
VSD
--
0.85
1.3
V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.



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