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TSM2321 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2321 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSM2321 1-5 2005/06 rev. A TSM2321 -20V P-Channel Enhancement Mode MOSFET VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package TSM2321CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -3.2 A Pulsed Drain Current IDM -11 A Ta = 25 oC 1.25 Maximum Power Dissipation Ta = 75 oC PD 0.8 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 100 oC/W Note: Surface mounted on FR4 board t<=5sec. Pin assignment: 1. Gate 2. Source 3. Drain |
Similar Part No. - TSM2321 |
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Similar Description - TSM2321 |
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