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HM5462DR Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM5462DR Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 11 page  2 订购信息 [表-1] 产品名称 型号 封装形式 管脚数目 打印标记 DFN6-L 6 1623 [表-2] 电压检测阈值及延迟时间 参数名称 精度范围 过电压充电保护阈值 VOCTYP 4.400V ±25mV 过电压充电恢复阈值 VOCRTYP 4.200V ±50mV 过电压放电保护阈值 VODTYP 2.500V ±75mV 过电压放电恢复阈值 VODRTYP 2.900V ±50mV 过电流放电保护阈值 VEDITYP 0.150V ±2 0mV 过电压充电保护延迟时间 tOCTYP 110ms ±30% 过电压放电保护延迟时间 tODTYP 55ms ±30% 过电流放电保护延迟时间 tEDITYP 7.0ms ±30% 0V 充电功能 允许 低功耗模式 允许 自动恢复功能 允许 管脚排列 顶视图 DFN6L 1 2 3 4 5 6 GND GND VDD VM P- P- MOS-D 图 -2 管脚排列 (不成比例) HM |
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