© Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 5

1

Publication Order Number:

MJD112/D

MJD112 (NPN)

MJD117 (PNP)

Preferred Device

Complementary Darlington

Power Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

(No Suffix)

(“T4” and “RL” Suffix)

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

100

Vdc

Collector−Base Voltage

100

Vdc

Emitter−Base Voltage

5

Vdc

Collector Current − Continuous

Peak

2

4

Adc

Base Current

50

mAdc

Derate above 25

°C

20

0.16

W

W/

°C

Derate above 25

°C

1.75

0.014

W

W/

°C

Operating and Storage Junction Temperature

Range

− 65 to

+ 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

6.25

°C/W

Thermal Resistance, Junction−to−Ambient*

71.4

°C/W

*These ratings are applicable when surface mounted on the minimum pad sizes

recommended.

SILICON

POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

DPAK−3

CASE 369D

DPAK

CASE 369C

MARKING

DIAGRAMS

Preferred devices are recommended choices for future use

and best overall value.

Y

= Year

WW

= Work Week

x

= 2 or 7

1 2

3

4

YWW

J11x

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

2

3

4

YWW

J11x

http://onsemi.com