MJD2955 datasheet(2/6 Pages) ONSEMI

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MJD2955 MJD3055

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

—

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ICEO

—

µAdc

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ICEX

—

0.02

mAdc

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150_C)

ICBO

—

0.02

mAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

IEBO

—

0.5

mAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 10 Adc, VCE = 4 Vdc)

hFE

100

—

Collector–Emitter Saturation Voltage (1)

(IC = 4 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

—

1.1

Vdc

Base–Emitter On Voltage (1)

(IC = 4 Adc, VCE = 4 Vdc)

VBE(on)

—

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

—

MHz

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

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