MJD47 MJD50

3

Motorola Bipolar Power Transistor Device Data

0.02

IC, COLLECTOR CURRENT (AMPS)

1

0.8

1.4

1.2

0.4

0

0.6

0.2

VBE(sat) @ IC/IB = 5 V

VBE(on) @ VCE = 4 V

VCE(sat) @ IC/IB = 5 V

0.02

IC, COLLECTOR CURRENT (AMPS)

2

0.06

0.2

2

40

10

100

VCE = 10 V

TJ = 150°C

60

0.1

0.6

25

°C

– 55

°C

20

0.04

0.4

1

200

4

6

Figure 3. DC Current Gain

t, TIME (ms)

1

0.01

1 k

0.3

0.2

0.07

R

θJC(t) = r(t) RθJC

R

θJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

Figure 4. “On” Voltages

0.7

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1

2

3

5

10

20

30

50

100

200 300

500

0.06

0.2

2

0.1

0.6

0.04

0.4

1

0.2

SINGLE PULSE

D = 0.5

0.05

TJ = 25°C

0.1

0.02

0.01

5

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.005

500

1

0.2

0.05

0.02

SECOND BREAKDOWN LIMIT

THERMAL LIMIT @ 25

°C

WIRE BOND LIMIT

20

200

10

TC ≤ 25°C

100

µs

1 ms

dc

0.01

0.1

0.5

2

5

Figure 6. Active Region Safe Operating Area

100

50

300

CURVES APPLY BELOW

RATED VCEO

MJD50

MJD47

500

µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in Fig-

ure 5. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.