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MJE13005 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJE13005
Description  NPN SILICON POWER TRANSISTOR
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE13005 Datasheet(HTML) 2 Page - ON Semiconductor

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MJE13005
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
—
—
1
5
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 11
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 12
*ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
hFE
10
8
—
—
60
40
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
VCE(sat)
—
—
—
—
—
—
—
—
0.5
0.6
1
1
Vdc
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
VBE(sat)
—
—
—
—
—
—
1.2
1.6
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
65
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 2)
Delay Time
(VCC = 125 Vdc, IC = 2 A,
IB1 = IB2 = 0.4 A, tp = 25 µs,
Duty Cycle
v 1%)
td
—
0.025
0.1
µs
Rise Time
(VCC = 125 Vdc, IC = 2 A,
IB1 = IB2 = 0.4 A, tp = 25 µs,
Duty Cycle
v 1%)
tr
—
0.3
0.7
µs
Storage Time
IB1 = IB2 = 0.4 A, tp = 25 µs,
Duty Cycle
v 1%)
ts
—
1.7
4
µs
Fall Time
v 1%)
tf
—
0.4
0.9
µs
Inductive Load, Clamped (Table 2, Figure 13)
Voltage Storage Time
(IC = 2 A, Vclamp = 300 Vdc,
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)
tsv
—
0.9
4
µs
Crossover Time
(IC = 2 A, Vclamp = 300 Vdc,
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)
tc
—
0.32
0.9
µs
Fall Time
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)
tfi
—
0.16
—
µs
*Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.



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