LP3443LT1G datasheet(2/6 Pages) LRC

2 / 6 page

LP3443LT1G, S-LP3443LT1G

20V P-Channel Enhancement-Mode MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μA)

Gate Threshold Voltage

(VDS = VGS, ID = -250μA)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -20 V)

Gate−to−Source Leakage Current

(VDS = 0 V, VGS = ±12 V)

Static Drain–Source On–State Resistance(Note 3)

(VGS = -4.5V, ID = -4.7A)

(VGS = -2.7V, ID = -3.8A)

(VGS = -2.5V, ID = -1.0A)

Diode Forward Voltage

(VGS = 0 V, ISD = -1.7 A)

Total Gate Charge@10V

Total Gate Charge@4.5V

Gate−to−Source Gate Charge

Gate−to−Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Body Diode Reverse Recovery Time

(IF=-4A,dl/dt=80A/µs)

Body Diode Reverse Recovery Charge

(IF=-4A,dl/dt=80A/µs)

Gate-Resistance

(VDS = 0 V, VGS = 0 V,f =1MHz)

3.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

trr

22.15

Qrr

6.61

Coss

(f = 200kHz,VDS= -

10 V)

Ciss

869

Crss

(VDD = -10V, RL

=10Ω,ΙD = −1Α,

VGEN = -4.5V,RG

= 6.2Ω)

td(on)

td(off)

VSD

-1.2

(VDS = -10V, ID = -

1.5A)

Qgs

1.5

Qgd

2.7

110

IGSS

±100

RDS(on)

mΩ

VGS(th)

-0.6

-0.85

-1.4

IDSS

μA

-1

STATIC

VBRDSS

-20

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Leshan Radio Company, LTD.

2/6

DYNAMIC

Rev.F Jun. 2020

LP3443LT1G Datasheet(PDF) 2 Page - Leshan Radio Company

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