FMMT491

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Pinning

1 = Base

2 = Emitter

3 = Collector

SOT-23

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

80

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

6

V

Collector Current

1

A

Total Power Dissipation

250

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

o

C)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

80

-

-

V

µA

Collector-Emitter Breakdown Voltage

60

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

µA

Collector Cutoff Current

-

-

100

nA

Collector-Emitter Saturation Voltage

(1)

-

-

0.25

V

-

-

0.5

V

Base-Emitter Voltage

(1)

-

-

1.1

V

-

-

1

V

100

-

-

-

100

-

300

-

DC Current Gain

(1)

80

-

-

-

30

-

-

Transition Frequency

150

-

-

MHz

Output Capacitance

-

-

10

pF

Electrical Characteristics

(Ratings at 25

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

.091(2.3)

.067(1.7)

Dimensions in inches and (millimeters)

.063(1.6)

.047(1.2)

.110(2.8)

.083(2.1)

.045(1.2)

.034(0.9)

.118(3.0)

.110(2.8)

.020(0.5)

.012(0.3)

.008(0.2)

.004(0.1)

.004

(0.10)

.051(1.3)

.035(0.9)

.028(0.7)

.012(0.3)

Max

.028(0.7)

.012(0.3)

2

1

3

Peak Pulse Current

2

A

-

Low equivalent on-resistance

Marking: 491