SS8550

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in 2W output amplifier of portable

radios in class B push-pull operation.

Pinning

1 = Emitter

2 = Base

3 = Collector

TO-92

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54) Typ

.050

(1.27)Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70) Min

2

5

2

3 2 1

5

Dimensions in inches and (millimeters)

Rank

B

C

D

E

Range

85~160

120~200

160~300

300~400

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

40

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

5

V

Collector Current

1.5

A

Base Current

500

mA

Total Power Dissipation

1

W

2

W

Junction Temperature

+150

Storage Temperature

-55 to +150

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

40

-

-

V

Collector-Emitter Breakdown Voltage

25

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

Collector Cutoff Current

-

-

0.1

µA

Emitter Cutoff Current

-

-

0.1

µA

-

-

0.5

V

-

-

1.2

V

-

-

1

V

45

-

-

-

85

-

400

-

40

-

-

-

Transition Frequency

100

-

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

-

-

-

-

-

-

-

-

-

-

-

-

-