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PJM2306NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2306NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM2306NSA N- Enhancement Mode Field Effect Transistor 1 / 6 www.pingjingsemi.com Revision：1.1 Dec-2018 Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3.16 A Drain Current-Pulsed Note 1 IDM 20 A Maximum Power Dissipation PD 0.75 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Parameter Symbol Limit Unit Thermal Resistance,Junction-to-Ambient Note 2 RθJA 167 ℃ /W Thermal Characteristics Schematic diagram SOT-23 1 2 Gate Source 3Drain Features Fast Switching Low RDS(ON) and Gate Charge Low Reverse Transfer Capacitance Halogen and Antimony Free (HAF) Product is acquired 1. Gate 2.Source 3.Drain Marking: S6 |
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