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VNH7070BAS Datasheet(PDF) 13 Page - STMicroelectronics |
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VNH7070BAS Datasheet(HTML) 13 Page - STMicroelectronics |
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13 / 38 page ![]() DocID029595 Rev 2 13/38 VNH7070BAS Electrical specifications 37 Figure 4. TDSTKON VOUT_MSD(2) Output Voltage for MultiSense shutdown VINA = 5 V; VINB = 0 V; VSEL0 = 5 V; RSENSE = 2.7 kΩ; IOUT = 3.5 A 5V ISENSE0 CS leakage current IOUT = 0 A; VSENSE = 0 V; INx = 0 V; SEL0 = 0; Tj = -40°C to 150°C (Standby) 0 0.5 μA IOUT = 0 A; VSENSE = 0 V; INx = 0 V; SEL0 = 5 V; Tj = -40°C to 150°C (No Standby) 0 0.5 μA INx = 5 V; PWM = 5 V; IOUT = 0 A; Tj = -40°C to 150°C 05 μA VSENSEH CS output voltage in fault condition VCC = 13 V; RSENSE = 1 kΩ; – E.g: OutA in open-load: VINA = 0 V; IOUTA = 0 A; VOUTA = 4 V; VSEL0 = 5 V 57 V ISENSEH CS output current in fault condition 9 V < VCC < 18 V; VSENSE = VSENSEH 10 20 30 mA 1. Analog sense current drift is deviation of factor K for a given device over (-40 °C to 150 °C and 9 V < VCC < 18 V) with respect to its value measured at Tj = 25 °C, VCC = 13 V. 2. Parameter guaranteed by design and characterization; not subjected to production test. Table 10. CS (7 V < VCC < 18 V) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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