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VSC7440 Datasheet(PDF) 393 Page - Microsemi Corporation |
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VSC7440 Datasheet(HTML) 393 Page - Microsemi Corporation |
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393 / 444 page  Electrical Specifications VMDS-10492 VSC7440 Datasheet Revision 4.2 376 6.1.8 Thermal Diode The device includes an on-die diode and internal circuitry for monitoring die temperature (junction temperature). The operation and accuracy of the diode is not guaranteed and should only be used as a reference. The on-die thermal diode requires an external thermal sensor, located on the board or in a stand-alone measurement kit. Temperature measurement using a thermal diode is very sensitive to noise. The following illustration shows a generic application design. Figure 133 • Thermal Diode Note: Microsemi does not support or recommend operation of the thermal diode under reverse bias. The following table provides the diode parameter and interface specifications with the pins connected internally to VSS in the device. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the following diode equation: Output low voltage VOL 0.4 V IOL =2mA Output low voltage VOL 0.7 V IOL =12mA Input high voltage VIH 1.85 3.6 V Input low voltage VIL –0.3 0.8 V Input high current2 IIH 10 µA VI =VDD_IO Input low current2 IIL –100 µA VI =0V Input capacitance CI 10 pF 1. VDD_IO = 2.38 V minimum, VDD_IO = 2.5 typical. 2. Input high current and input low current equals the maximum leakage current, excluding the current in the built-in pull resistors. Table 287 • Thermal Diode Parameters Parameter Symbol Typical Maximum Unit Forward bias current IFW See note1 1. Typical value is device dependent. 1mA Diode ideality factor n 1.008 Table 286 • GPIO, SI, JTAG, and Miscellaneous Signals DC Specifications (continued) Parameter Symbol Minimum Typical Maximum Unit Condition Microsemi Die Cell Temperature Diode External Device 2200 pF Anode Cathode Anode Cathode Isolated Sensor Circuit D+ D– Microsemi Die Cell Temperature Diode External Device 2200 pF Grounded Sensor Circuit DXP GND IFW IS e qVD () nkT () ⁄ 1 – () = |
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