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MJE243 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJE243 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() MJE243 MJE253 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) VCEO(sus) 100 — Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) ICBO — — 0.1 0.1 µAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 0.1 µAdc ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 40 15 180 — — Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) — — 0.3 0.6 Vdc Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) — 1.8 Vdc Base–Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) — 1.5 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT 40 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob — 50 pF Figure 2. Switching Time Test Circuit +11 V 25 µs 0 – 9.0 V RB – 4 V D1 SCOPE VCC + 30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1K IC, COLLECTOR CURRENT (AMPS) VCC = 30 V IC/IB = 10 TJ = 25°C 500 300 200 100 50 td 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 Figure 3. Turn–On Time 3 2 5 2 1 3 tr NPN MJE243 PNP MJE253 0.02 |
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