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BC868 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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BC868 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  1 / 3 www.pingjingsemi.com Revison：1.0 Feb-2019 Features ⚫ Low saturation voltage ⚫ Excellent current-to-gain characteristics Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 32 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Power Dissipation PD 500 250 °C/W Junction Temperature TJ 150 TSTG -55 to 150 °C Unit DC Current Gain 40 40 40 SOT-89 1. Base 2. Collector 3.Emitter Marking: -10: 5J -16:5K -25:5L Storage Temperature Range Maximum Junction-to-Ambient RθJA °C mW BC868 NPN Transistor |
Similar Part No. - BC868 |
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Similar Description - BC868 |
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