BCW68 datasheet(2/3 Pages) PJSEMI

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BCW68

PNP Silicon Epitaxial Planar Transistor

2 / 3

www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Characteristics (Ta=25℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 10 V, -IC = 100 µA

at -VCE = 1 V, -IC = 10 mA

at -VCE = 1 V, -IC = 100 mA

at -VCE = 2 V, -IC = 500 mA

hFE

120

180

100

160

250

100

250

400

630

Collector Base Cutoff Current

at -VCB = 45 V

-ICBO

Emitter Base Cutoff Current

at -VEB = 4 V

-IEBO

Collector Base Breakdown Voltage

at -IC = 10 µA

-V(BR)CBO

Collector Emitter Breakdown Voltage

at -IC = 10 mA

-V(BR)CEO

Emitter Base Breakdown Voltage

at -IE = 10 µA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

at -IC = 500 mA, -IB = 50 mA

-VCE(sat)

0.3

0.7

Base Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

at -IC = 500 mA, -IB = 50 mA

-VBE(sat)

1.25

Transition Frequency

at -VCE = 10 V, -IC = 20 mA, f = 100 MHz

100

MHz

Collector Base Capacitance

at -VCB = 10 V, f = 1 MHz

Cob

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