FCX493 datasheet(2/4 Pages) PJSEMI

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Revison：1.0

May - 2019

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Units

hFE

100

300

Collector Base Cutoff Current

at VCB =

100 V

ICBO

0.1

μA

Emitter Base Cutoff Current

at VEB =

4 V

IEBO

0.1

μA

Collector Base Breakdown Voltage

at IC = 100 µA

V(BR)CBO

120

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

100

Emitter Base Breakdown Voltage

at IE = 1

00 µA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 0.5 A, IB = 50 mA

at IC = 1 A, IB = 100 mA

VCE(sat)

Base Emitter Voltage

at VCE =

10 V, IC = 1 A

VBE

Transition Frequency

at VCE =

10 V, IC = 50 mA, f = 100 MHz

150

MHz

DC Current Gain

at VCE = 10 V, IC = 1 mA

at VCE = 10 V, IC = 250 mA

at VCE = 10 V, IC = 500 mA

at VCE = 10 V, IC = 1 A

FCX493

NPN Transistor

Base Emitter Saturation Voltage

at IC = 1 A, IB = 100 mA

VBE(sat)

1.1

Cob

Output Capacitance

at VCB =

10 V, f = 1 MHz

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