• Silicon bi-directional trigger device
intended for use in thyristor (SCR and
TRIAC) trigger circuits, energy saving
lighting circuits and other switching
functions.
SPECIAL FEATURES:
• Low breakover current.
• Excellent symmetry.
• Very low leakage current.
BREAKOVER VOLTAGE
32 V
ON-STATE CURRENT
2.0 Amps
Feb - 03
Electrical Characteristics at Tamb = 25 ºC
Breakover Voltage *
Breakover Voltage Symmetry
Dynamic breakover voltage *
Output Voltage *
Breakover Current *
Rise Time *
Leakage Current *
VBO
VBO+ - -VBO-
∆V±
VO
IBO
tr
IB
IBO, C = 22nF ** (see Figure 1)
IBO, C = 22nF ** (see Figure 1)
∆I = [I
BO to IF = 10 mA]
(see Figure 1)
(see Figure 3)
C = 22 nF **
(see Figure 4)
VB = 0.5 VBO max
(see Figure 1)
28
5
5
36
50
10
V
V
V
V
µA
µs
µA
PARAMETER
CONDITIONS
Min.
Typ.
Max.
Unit
32
1.5
Thermal Resistance
Junction to Ambient
Junction to leads
R th (j-a)
R th (j-l)
400
150
ºC/W
ºC/W
PARAMETER
CONDITIONS
Min.
Typ.
Max.
Unit
Absolute Maximum Ratings, according to IEC publication No. 134
Total Power Dissipation
Repetitive peak on-state current
Storage Temperature Range
Operating Junction Temperature
Ptot
ITRM
Tstg
Tj
Ta = 65 ºC
tp = 20 µs, f = 100 Hz
-40
-40
150
2
+125
+125
mW
A
ºC
ºC
PARAMETER
CONDITIONS
Min.
Typ.
Max.
Unit
MARKING CODE
P1
** Connected in parallel with the devices.
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 250 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
Dimensions in mm.
DO-35
Glass Axial
Package
3.60 ± 0.55
54.4 ± 0.55
FD0200YR
DIAC
IP
Peak Current *
see Figure 3 (Gate)
± 3
A
0.3
* Applicable to both forward and reverse directions.
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