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1SS314 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1SS314 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  1SS314 Silicon Epitaxial Planar Switching Diode 1 / 3 www.pingjingsemi.com Revis ion：1.0 Oct-2017 Fe atures Small plastic package suitable for surface mounted design VHF tuner band switch Absolute Maximum Ratings ( Ta =25℃ ) Parameter Symbol Value Unit Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature TJ 125 O C Storage Temperature Range TSTG - 55 to + 125 O C Electrical Characteristics（ Ta =25℃） Parameter Symbol Min. Max. Unit Forward Voltage at IF = 2 mA VF - 0.85 V Reverse Current at VR = 15 V IR - 0.1 μA Reverse Voltage at IR = 1 μA VR 30 - V Total Capacitance at VR = 6 V, f = 1 MHz CT - 1.2 pF Series Resistance at IF = 2 mA, f = 100 MHz rS - 0.9 Ω SOD-323 1Cathode 2Anode 1 2 Marking : TY |
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