9NE90 datasheet(1/11 Pages) WXDH

Part #	9NE90

Description	9A 900V N-channel Enhancement Mode Power MOSFET

PDF	11 Pages

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Manufacturer	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

Direct Link	http://www.jswxdh.cn

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ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

www.roum.cn

Page 1 of 11

9NE90

1

Description

These N-channel Enhanced VDMOSFETs, is obtained by

the

self-aligned

planar

technology which

reduce

the

conduction

loss,

improve

switching

performance

and

enhance the avalanche energy. Which accords with the

RoHS standard.

2

Features

● Fast Switching

● Low ON Resistance(Rdson≤1.3Ω)

● Low Gate Charge(Typical Data:62nC)

● Low Reverse Transfer Capacitances(Typical:18pF)

● 100% Single Pulse Avalanche Energy Test

● 100% Δ

VDS Test

3

Applications

● used in various power switching circuit for system

miniaturization and higher efficiency.

● Power switch circuit of adaptor and Charger.

9A 900V N-channel Enhancement Mode Power MOSFET

4

Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Maximum Drian-Source DC Voltage

VDS

900

V

Maximum Gate-Drain Voltage

VGS

±30

V

Drain Current(continuous)

ID（T=25℃）

（T=100℃

）

9

A

5.8

A

Drain Current(Pulsed)

(Note 1)

IDM

36

A

Single Pulse Avalanche Energy

(Note 5)

EAS

350

mJ

Avalanche Energy Repetitive

(Note 1)

EAR

30

mJ

Avalanche Current

(Note 1)

IAR

2.5

A

Peak Diode Recovery dv/dt

(Note 6)

dv/dt

5

V/ns

Total Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

137

W

Gate-Source ESD

(HBM-

C=100pF,R=1.5KΩ）

VESD(G-S)

3000

V

Junction Temperature

Tj

150

℃

storage Temperature

Tstg

-55～150

℃

Maximum Temperature for soldering

TL

300

℃

4.2 Thermal Characteristics

PARAMETER

SYMBOL

VALUE

UNIT

Thermal Resistance Junction to Case-sink

RthJC

0.91

℃/W

Thermal Resistance Junction to Ambient

RthJA

62.5

℃/W

VDSS = 900V

RDS(on) （TYP)= 0.9Ω

ID = 9A

TO-220C

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